Magnetotunneling spectroscopy of a biased triple-barrier semiconductor heterostructure |
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| Institution: | 1. School of Civil, Environmental, & Architectural Engineering, Korea University, Seoul, Korea;2. Arup, NY, USA;1. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, International Joint Research Laboratory of Nano-Micro Architecture Chemistry, College of Chemistry, Jilin University, 2699 Qianjin Street, Changchun 130012, China;2. School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Tianhe District, Guangzhou 510640, China;1. Posgrado en Ciencia e Ingeniería de Materiales, Universidad Nacional Autónoma de México, AP 70-360, Coyoacán 04510, DF, Mexico;2. Laboratorio de Síntesis de Materiales, Facultad de Ciencias Físico-Matemáticas, Universidad Autónoma de Sinaloa, Ciudad Universitaria S/N, CP. 80000, Culiacán de Rosales, Sinaloa, Mexico;3. Instituto de Física, Universidad Nacional Autónoma de México, AP 20-364, Álvaro Obregón, 01000 DF, Mexico;4. Centro de Ciencias de Sinaloa, Ave. De las Américas 2771 Nte. CP 80000, Culiacán de Rosales, Sinaloa, Mexico;5. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, AP 70-360, Coyoacán 04510, DF, Mexico;1. Centro de Investigación en Materiales Avanzados (CIMAV) S. C., Miguel de Cervantes 120, Chihuahua 31136, Chihuahua, México;2. Escuela Superior de Ingeniería Mecánica y Eléctrica. Instituto Politécnico Nacional, Unidad Prof. Adolfo López Mateos, Zacatenco, Delegación Gustavo A. Madero, 07738 México City, México;3. Centro de Nanociencias Micro y Nanotecnología. Instituto Politécnico Nacional, Unidad Prof. Adolfo López Mateos, Zacatenco, Delegación Gustavo A. Madero, 07738 México City, México;4. Gatan, Inc., 5794, W Las Positas BLVD Pleasanton, CA 94588, USA;5. National Institute for Nanotechnology, 11421 Saskatchewan Dr., Edmonton, Canada T6G 2M9 |
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| Abstract: | In this work we describe a magnetotunneling spectroscopy technique for probing the localization degree of two-dimensional states and mapping the subbands in the active region of a resonant-tunneling semiconductor heterostructure. The reported experimental data consist of the low-temperature tunneling current traces of an asymmetric triple-barrier structure measured by sweeping an in-plane magnetic field up to 10 T. According to our interpretation model, the main features observed in the tunnel current traces are due to the field-induced resonant transitions between two-dimensional states at the crossing region between dispersion curves. The data reveals the highly localized nature of the quantum states in an asymmetric double-quantum-well structure even for those with very narrow middle barriers. |
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