Extrinsic base surface-passivated dual-emitter heterojunction phototransistors |
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| Institution: | 1. Department of Electrical Engineering, National Taiwan-Ocean University, 2 Peining Road, Keelung, Taiwan, ROC;2. Department of Electrical Engineering, National University of Kaohsiung, 700 Kaohsiung University Road, Kaohsiung, Taiwan, ROC;1. Department of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-Do 440-746, Republic of Korea;2. Department of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-Do 440-746, Republic of Korea;3. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-Do 440-746, Republic of Korea;1. State Key Lab of Optoelectronics Materials & Technologies, School of Physics & Engineering, Sun Yat-Sen University, Guangzhou 510275, PR China;2. Shenzhen Graduated School, Peking University, Shenzhen 518055, PR China;1. STMicroelectronics, Albany Alliance, 257 Fuller Rd, Albany, NY, USA;2. CEA, LETI, Albany NanoTech, Albany, NY 12203, USA;3. IBM, Albany Alliance, 257 Fuller Rd, Albany, NY, USA;4. Soitec, Parc Technologique des Fontaines, 38190 Bernin, France;5. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France;6. STMicroelectronics, STD, 850 rue Jean Monnet, Crolles, France;1. Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea;2. Semiconductor Laboratory, Samsung Advanced Institute of Technology, Gyeonggi-do 446-712, Korea |
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| Abstract: | N–p–n InGaP/GaAs Dual-Emitter HPTs (DEHPTs) with and without extrinsic base surface passivation were fabricated to investigate the influence of the surface leakage on the device’s optical performance. There are four operating regions appearing in the output characteristics of DEHPTs under illumination: negative-saturation, negative-tuning, positive-tuning and positive-saturation regions. The InGaP-passivated DEHPT (P-DEHPT), i.e. DEHPT with the extrinsic base surface passivated by InGaP, exhibits the maximum optical gains of 46.57, 46.86 and 47.39 while the non-passivated one (NP-DEHPT) shows ones of 32.02, 33.55 and 33.57 for optical powers of 8.62, 13.2 and 17.5 μW, respectively. However, the NP-DEHPT exhibits the larger peak gain-tuning efficiencies of 37.35, 41.03 and 44.10 compared to 12.76, 13.72 and 16.01 V ?1 for the P-DEHPT for optical powers of 8.62, 13.2 and 17.5 μW, respectively. The better tuning efficiency makes the NP-DEHPT a possible low optical power optoelectronic application. |
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