Microstructure and photoluminescence of a-SiO x :H |
| |
| Authors: | Zhixun Ma Xianbo Liao Wenchao Cheng Jie He Guozhen Yue Yongqian Wang Guanglin Kong |
| |
| Affiliation: | (1) State Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Science, 100083 Beijing, Chinai;(2) State Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China |
| |
| Abstract: | ![]()
Two strong photoluminescence (PL) bands in the spectral range of 550–900 nm have been observed at room temperature from a series of a-SiO x :H films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. One is composed of a main band in the red-light region and a shoulder; the other is located at about 850 nm, only found after 1170°C annealing in N2 atmosphere. In conjunction with infrared (IR) and micro-Raman spectra, it is thought that the two PL bands are associated with a-Si clusters in the SiO x network and nanocrystalline silicon in SiO2, respectively. Project supported by the National Natural Science Foundation of China (Grant No. 69576025). |
| |
| Keywords: | quantum confinement effects photoluminescence Infrared and Raman spectra |
| 本文献已被 SpringerLink 等数据库收录！ |
|
