Introduction of nickel surface layer atoms into silicon

Results of experimental studies of the process of introduction of nickel atoms into silicon upon irradiation of layered Ni-Si structures by argon ions are presented. Following irradiation, specimen composition was studied using back scattering of helium ions. Processing of the back scattering spectra was performed by an improved method using an analytical approach. The effects of annealing temperature and dosage on the process of formation of the suicide NiSi are studied.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 36–40, July, 1989.