Epitaxial growth of Bi thin films on Ge(1 1 1) |
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Authors: | Shinichiro Hatta Yoshiyuki Ohtsubo Hiroshi Okuyama |
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Institution: | a Department of Chemistry, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan b JST CREST, Saitama 332-0012, Japan |
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Abstract: | We investigated Bi thin film growth on Ge(1 1 1) by using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the submonolayer regime, adsorbed Bi atoms form patches of the (2×1) structure. However, the structure does not grow to a long-range order. Following the formation of a (1×1) monolayer (ML) film, two-dimensional (1 1 0)-orientated Bi islands grow. The film orientation changes from (1 1 0) to (1 1 1) at 6-10 ML. The (1 1 0)-oriented Bi film shows a six-domain LEED pattern with missing spots, associated with a glide-line symmetry. The hexagonal (1 1 1) film at 14 ML has a lattice constant 2% smaller than bulk Bi(1 1 1). |
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Keywords: | Low-energy electron diffraction Scanning tunneling microscopy Thin film growth Bismuth Ge(1 1 1) |
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