Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate |
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| Authors: | Minglong Zhao Xiansheng Tang Wenxue Huo Lili Han Zhen Deng Yang Jiang Wenxin Wang Hong Chen Chunhua Du Haiqiang Jia |
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| Affiliation: | (Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;The Yangtze River Delta Physics Research Center,Liyang 213000,China) |
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| Abstract: | We have successfully prepared GaN based high electron mobility transistors (HEMTs) on metallic substrates transferred from silicon substrates by electroplating technique. GaN HEMTs on Cu substrates are demonstrated to basically have the same good electric characteristics as the chips on Si substrates. Furthermore, the better heat dissipation of HEMTs on Cu substrates compared to HEMTs on Si substrates is clearly observed by thermoreflectance imaging, showing the promising potential for very high-power and high-temperature operation. This work shows the outstanding ability of HEMT chips on Cu substrates for solving the self-heating effect with the advantages of process simplicity, high yield, and low production requirement. |
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