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Investigation of active-region doping on InAs/GaSb long wave infrared detectors
Authors:Su-Ning Cui  Dong-Wei Jiang  Ju Sun  Qing-Xuan Jia  Nong Li  Xuan Zhang  Yong Li  Fa-Ran Chang  Guo-Wei Wang  Ying-Qiang Xu  Zhi-Chuan Niu
Affiliation:(State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;School of Energy and Environment Science,Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology(Ministry of Education),Provincial Key Laboratory of Optoelectronic Information Technology,Yunnan Normal University,Kunming 650092,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China)
Abstract:
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