Formation and structural refinements of tunneled intergrowth phases in the Ga2O3-In2O3-SnO2-TiO2 system

Over 100 samples were prepared as (Ga,In)₄(Sn,Ti)_n−4O_2n−2, n=6, 7, and 9 by solid-state reaction at 1400 °C and characterized by X-ray diffraction. Nominally phase-pure beta-gallia-rutile intergrowths were observed in samples prepared with n=9 (0.17?x?0.35 and 0?y?0.4) as well as in a few samples prepared with n=6 and 7. Rietveld analysis of neutron time-of-flight powder diffraction data were conducted for three phase-pure samples. The n=6 phase Ga_3.24In_0.76Sn_1.6Ti_0.4O₁₀ is monoclinic, P2/m, with Z=2 and a=11.5934(3) Å, b=3.12529(9) Å, c=10.6549(3) Å, β=99.146(1)°. The n=7 phase Ga_3.24In_0.76Sn_2.4Ti_0.6O₁₂ is monoclinic, C2/m, with Z=2 and a=14.2644(1) Å, b=3.12751(2) Å, c=10.6251(8) Å, β=108.405(1)°. The n=9 phase Ga_3.16In_0.84Sn₄TiO₁₆ is monoclinic, C2/m, with Z=2 a=18.1754(2) Å, b=3.13388(3) Å, c=10.60671(9) Å, β=102.657(1)°. All of the structures are similar in that they possess distorted hexagonal tunnels parallel to the 010] vector.