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Influence of Sulfur Atoms on TADF Properties from Through-Space Charge Transfer Excited States
Authors:Danwen Zhang  Dr Chenglin Jiang  Zhenhua Wen  Xingyu Feng  Prof Dr Kai Li
Institution:1. Shenzhen Key Laboratory of New Information Display and Storage Materials College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055 P. R. China

These authors contributed equally.;2. Shenzhen Key Laboratory of New Information Display and Storage Materials College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055 P. R. China

Abstract:The harnessing of heavy atom effect of chalcogen elements offers a way for boosting the thermally activated delayed fluorescence (TADF) of purely organic luminescent materials that can harvest triplet excitons. However, the conformational and electronic variations induced by the heavy and large atoms may also have adverse effects on the TADF properties. Herein, the design, synthesis, and structures of a new type of through-space charge transfer (TSCT) emitters containing benzothiazino2,3,4-kl]phenothiazine (DPTZ) as the donor unit are reported. The influences of S atoms on the emission properties have been systematically investigated by means of theoretical simulations, electrochemical and spectroscopic studies. Although the presence of π-stacking interactions and calculated spin-orbit coupling (SOC) values are beneficial for TSCT-TADF properties, the triplet TSCT states are uplifted to above the locally excited (LE) state of the acceptor moieties. As a result, the new emitters display longer delayed fluorescence lifetimes (τDF) of 255.0–114.3 μs and lower PLQYs of 45–61 % in comparison with the O-containing congeners (τDF=26.9–6.8 μs; PLQYs=74–71 %). This work highlights that a full consideration of various effects is essential when making use of heavy chalcogen atoms for the design of TADF emitters.
Keywords:TADF  through-space charge transfer  heavy atom effect  π-π stacking  donor-acceptor
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