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Cu3(HHTP)2 c-MOF/ZnO Ultrafast Ultraviolet Photodetector for Wearable Optoelectronics |
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| Authors: | Chenxu Kang Dr Muhammad Ahsan Iqbal Dr Suyun Zhang Xiaoliang Weng Yuting Sun Dr Lu Qi Dr Wei Tang Prof Shuangchen Ruan Prof Yu-Jia Zeng |
| Institution: | 1. Key Laboratory of Optoelectronic Devices and, Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China
Contribution: Conceptualization (lead), Data curation (lead), Formal analysis (lead), Writing - original draft (lead);2. Key Laboratory of Optoelectronic Devices and, Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China Contribution: Writing - review & editing (supporting);3. Key Laboratory of Advanced Optical Precision Manufacturing, Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen, 518118 P. R. China Contribution: Writing - review & editing (supporting);4. Key Laboratory of Optoelectronic Devices and, Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China |
| Abstract: | Two-dimensional conductive metal–organic frameworks (2D c-MOFs) are a family of highly tunable and electrically conducting materials that can be utilized in optoelectronics. A major issue of 2D c-MOFs for photodetection is their poor charge separation and recombination dynamics upon illumination. This study demonstrates a Cu3(HHTP)2/ZnO type-II heterojunction ultraviolet (UV) photodetector fabricated by layer-by-layer (LbL) deposition, in which the charge separation of photogenerated carriers is enhanced. At optimized MOF layer cycles, the device achieves a responsivity of 78.2 A/W and detectivity of 3.8×109 Jones at 1 V. Particularly, the device can be operated in the self-powered mode with an ultrafast response time of 70 μs, which is the record value for MOF-based photodetectors. In addition, even after 1000-time bending of 180°, the flexible device maintains stable performance. This flexible MOF-based UV photodetector with anti-fatigue and anti-bending properties provides strong implication to wearable optoelectronics. |
| Keywords: | UV photodetector c-MOF ZnO Cu3(HHTP)2 |