|
|||||
|
|
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer |
|
| Authors: | ZY Zhang CL YangYQ Wei XL YeP Jin ChM LiXQ Meng B XuZG Wang |
| Institution: | a Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China b Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, People's Republic of China c Photonics Laboratory, Department of Microelectronics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden |
| Abstract: | In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL integrated intensity ratio of the first excited state to the ground state for InAs QDs unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. We believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states. |
| Keywords: | 68 66 Hb 78 67 Hc 81 07 Ta |
| 本文献已被 ScienceDirect 等数据库收录！ | |