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Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells |
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| Authors: | V.V. Bel'kov,S.D. Ganichev,Petra SchneiderC. Back,M. OestreichJ. Rudolph,D. Hä geleL.E. Golub,W. Wegscheider,W. Prettl |
| Affiliation: | a Fakultät für Physik, Universität Regensburg, 93040 Regensburg, Germany b A.F. Ioffe Physico-Technical Institute of the RAS, 194021 St. Petersburg, Russian Federation c Institut für Festkörperphysik, Universität Hannover, 30167 Hannover, Germany d Walter Schottky Institute, TU Munich, 85748 Garching, Germany |
| Abstract: | We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands. |
| Keywords: | 72.25.Fe 78.67.De |
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