Mass transport model for semiconductor nanowire growth |
| |
Authors: | Johansson Jonas Svensson C Patrik T Mårtensson Thomas Samuelson Lars Seifert Werner |
| |
Institution: | Solid State Physics and The Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-22100 Lund, Sweden. jonas.johansson@ftf.lth.se |
| |
Abstract: | We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|