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The role of Sb in the molecular beam epitaxy growth of 1.30–1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content |
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| Authors: | Donghai Wu Zhichuan Niu Shiyong Zhang Haiqiao Ni Zhenhong He Zheng Sun Qin Han Ronghan Wu |
| Affiliation: | State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Abstract: | Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 μm range is much more apparent than that in the 1.3 μm range, which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 μm single-QW were comparable with that of the 1.3 μm QWs. |
| Keywords: | A1. Photoluminescence A3. Molecular beam epitaxy A3. Quantum wells B1. Nitrides B2. Semiconducting III–V materials |
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