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A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD |
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| Authors: | Fangsheng Chen Hong Chen Zhen Deng Taiping Lu Yutao Fang Yang Jiang Ziguang Ma Miao He |
| Affiliation: | 1. Key Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, China 2. Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China |
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