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Peculiarities of photoluminescence of vertical n +/n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors
Authors:Aurimas Čerškus  Jurgis Kundrotas  Algirdas Sužiedėlis  Jonas Gradauskas  Steponas Ašmontas  Eric Johannessen  Agne Johannessen
Institution:1. Semiconductor Physics Institute of Center for Physical Sciences and Technology, A. Go?tauto 11, 01108, Vilnius, Lithuania
2. Vilnius Gediminas Technical University, Saul?tekio al. 11, 10223, Vilnius, Lithuania
3. Buskerud and Vestfold University College, Raveien 215, 3184, Borre, Norway
Abstract:
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