| 高温高压下CeTbO3合成过程中电阻的动态测试研究 |
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| 引用本文： | 刘宏建,苏文辉,千正男,王一峰,吴代鸣,崔硕景. 高温高压下CeTbO3合成过程中电阻的动态测试研究[J]. 高压物理学报, 1988, 2(2) |
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| 作者姓名： | 刘宏建 苏文辉 千正男 王一峰 吴代鸣 崔硕景 |
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| 作者单位： | 吉林大学物理系固体物理教研室(刘宏建，苏文辉，千正男，王一峰，吴代鸣)，吉林大学物理系固体物理教研室(崔硕景) |
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| 摘 要： | 在0.5 GPa、4.0 GPa的压力下，从室温到800 ℃的温度范围内测量了氧化物CeTbO3、单稀土氧化物Tb4O7、CeO2和摩尔比维4∶1配比的混合物CeO2+Tb4O7等的电阻随温度变化关系。对这四种物质均反映出电阻随温度增加而减小的半导体特征。在压力维0.5 GPa，温度高于600 ℃时发现了混合物CeO2+Tb4O7、氧化物Tb4O7中电阻变化的起伏。X射线衍射谱表明，对应这一电阻变化，在结构上出现了变化。结果分析表明，这一变化与Tb4+→Tb3+的价态变化密切相联。
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| 关 键 词： | CeTbO3 高温高压合成 动态电阻 变价 氧缺位 |
| 收稿时间： | 1987-10-12; |
A DYNAMIC MEASUREMENT STUDY OF RESISTANCE IN SYNTHESIS PROCESS OF CeTbO_3 UNDER HIGH PRESSURE AND HIGH TEMPERATURE |
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| Liu Hongjian. Su Wenhui. Qian Zhengnan,Wang Yifeng,Wu Daiming. Cui Shuojing. A DYNAMIC MEASUREMENT STUDY OF RESISTANCE IN SYNTHESIS PROCESS OF CeTbO_3 UNDER HIGH PRESSURE AND HIGH TEMPERATURE[J]. Chinese Journal of High Pressure Physics, 1988, 2(2) |
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| Authors: | Liu Hongjian. Su Wenhui. Qian Zhengnan Wang Yifeng Wu Daiming. Cui Shuojing |
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| Affiliation: | Research Group of Solid State Physics, Jilin University, Changchun 130023, China |
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| Abstract: | The resistance of oxides CeTbO3, CeO2, Tb4O7 and mixture CeO2+Tb4O7 (Ce∶Tb=1∶1) has been measured from room temperature to 800 ℃ at 4.0 GPa and 0.5 GPa. All of them show semiconducting character of resistance. The up-and-down changes of the mixture and Tb4O7 have been found at 0.5 GPa above 600 ℃. X-ray diffraction shows that corresponding to this change, there is a change on the structure which might closely relate to the valence fluctuation from Tb4+ to Tb3+. |
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| Keywords: | CeTbO3 high-pressure high-temperature synthesis in situ electric resis-tance valence fluctuation oxygen-deficiency site. |
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