A comparative study on the performance of hybrid solar cells containing ZnSTe QDs in hole transporting layer and photoactive layer |
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Authors: | Mansoor Ani Najeeb Shahino Mah Abdullah Fakhra Aziz Zubair Ahmad R. A. Shakoor A. M. A. Mohamed Uzma Khalil Wageh Swelm Ahmed A. Al-Ghamdi Khaulah Sulaiman |
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Affiliation: | 1.Center for Advanced Materials (CAM),Qatar University,Doha,Qatar;2.Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science,University of Malaya,Kuala Lumpur,Malaysia;3.Department of Electronics, Jinnah College for Women,University of Peshawar,Peshawar,Pakistan;4.Department of Metallurgical and Materials Engineering, Faculty of Petroleum and Mining Engineering,Suez University,Suez,Egypt;5.Department of Physics, Faculty of Science,King Abdulaziz University,Jeddah,Saudi Arabia;6.Physics and Engineering Mathematics Department, Faculty of Electronic Engineering,Menoufia University,Menouf,Egypt |
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Abstract: | In this paper, ZnSTe quantum dots-based hybrid solar cells (HSC) with two different device architectures have been investigated. The improved performance of the poly(3-hexylthiophene) (P3HT) and [6,6]phenyl C71 butyric acid methyl ester (PC71BM)-based bulk heterojunction (BHJ) solar cells by the incorporation of ZnSTe quantum dots (QDs) with an average size of 2.96 nm in PEDOT:PSS layer and active layer that have been demonstrated. Although the efficiency of both types of devices is almost the same, a close comparison reveals different reasons behind their improved performance. The device prepared with QDs in the HTL has shown reduced series resistance, increased shunt resistance, and improved mobility. On the other hand, QDs in the photoactive layer demonstrates increased photo-generation leading to improved efficiency. |
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