基于钠助熔剂法的GaN单晶生长研究进展

宽禁带氮化镓(GaN)材料以其独特的性质和应用前景成为国内外研究的热点，高质量GaN单晶衬底的制备是获得性能优异的光电子器件和功率器件的基础。钠助熔剂法生长条件温和，易获得高质量、大尺寸的GaN单晶，是一种具有广阔商业化前景的GaN单晶生长方法。钠助熔剂法自20世纪90年代末期被发明以来，经过20多年的发展，钠助熔剂法生长的晶体在尺寸与质量上都取得了长足的进步。本文从晶体生长原理和关键工艺(籽晶选择、温度梯度以及添加剂)等方面综述了钠助熔剂法生长GaN单晶研究进展，并对其面临的挑战和未来发展趋势进行了展望。

Research Progress on the Growth of GaN Single Crystal by Sodium Flux Method

Gallium nitride (GaN) material has become a research hotspot at home and abroad because of its unique properties and application prospects. High quality GaN single crystals are the prerequisite for obtaining optoelectronic devices and power devices with excellent performance. Because of its mild growth conditions, the sodium flux method is easy to obtain high quality and large size GaN single crystals, and it is a promising method for the growth of GaN single crystals. Since the sodium flux method was invented in the late 1990s, the crystals grown by the sodium flux method have made considerable progress in size and quality after more than 20 years of development. Recent research progress of GaN single crystals grown by the sodium flux method from the aspects of crystal growth principle, seed crystal selection, temperature gradient and additives are summarized in this paper, and the challenges and future development trend are also prospected.