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Formation of Fe i –B pairs in silicon at high temperatures |
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| Authors: | H P Gunnlaugsson K Bharuth-Ram M Dietrich M Fanciulli H O U Fynbo G Weyer |
| Institution: | 1. Institute of Physics and Astronomy, Aarhus University, Ny Munkegade, 8000, ?arhus C, Denmark 2. School of Physics, University of KwaZulu-Natal, Durban, 4041, South Africa 3. EP Division, CERN, CH-1211, Geneva, 23, Switzerland 4. Laboratorio Nazionale MDM-INFM, Via C. Olivetti 2, 20041, Agrate Brianza, Italy |
| Abstract: | We report on the detection of Fe i –B pairs in heavily B doped silicon using 57Fe emission Mössbauer spectroscopy following implantation of radioactive 57Mn+ parent ions (T 1/2?=?1.5 min) at elevated temperatures >?850 K. The Fe i –B pairs are formed upon the dissociation of Fe i –V pairs during the lifetime of the Mössbauer state (T 1/2?=?100 ns). The resulting free interstitial Fei diffuses over sufficiently large distances during the lifetime of the Mössbauer state to encounter a substitutional B impurity atom, forming Fe i –B pairs, which are stable up to ～1,050 K on that time scale. |
| Keywords: | Fe i – B p++ B doped silicon M?ssbauer spectroscopy |
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