Temperature dependence of a lattice defect induced electric fieldgradient at181Ta in Pt

By implantation of¹⁸¹Hf ions radiation damage is produced in platinum. Subsequent annealing of the samples leads to the trapping of a unique defect at the probe atoms. The temperature dependence of the resulting electric field gradient eq(T) is measured by use of the TDPAC-method. Assuming a relation eq(T)=eq(0)·(1–B·T ^3/2) one findsB=(1.9±0.7)×10^–6 K^–3/2. This low value is of the same magnitude as the corresponding values for¹¹¹Cd in various locally distorted cubic metals.