Structure of the free exciton luminescence band of heteroepitaxial ZnSe/GaAs layers |
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| Authors: | Yu. P. Rakovich A. L. Gurskii A. S. Smal’ A. A. Gladyshchuk Kh. Khamadi G. P. Yablonskii M. Khoiken |
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| Affiliation: | (1) Brest Polytechnical Institute, 224000 Brest, Belarus |
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| Abstract: | ![]()
The exciton reflectance and photoluminescence spectra of epitaxial ZnSe/GaAs layers with a thickness of 2–4 μm are investigated in the temperature range 10–120 K. It is shown that one of the causes of the formation of the doublet structure of the A n=1 photoluminescence band is interference of the exciton radiation at the boundaries of the near-surface dead layer. Fiz. Tverd. Tela (St. Petersburg) 40, 881–883 (May 1998) |
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