Structure of the free exciton luminescence band of heteroepitaxial ZnSe/GaAs layers |
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| Authors: | Yu P Rakovich A L Gurskii A S Smal’ A A Gladyshchuk Kh Khamadi G P Yablonskii M Khoiken |
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| Institution: | (1) Brest Polytechnical Institute, 224000 Brest, Belarus |
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| Abstract: | The exciton reflectance and photoluminescence spectra of epitaxial ZnSe/GaAs layers with a thickness of 2–4 μm are investigated
in the temperature range 10–120 K. It is shown that one of the causes of the formation of the doublet structure of the A
n=1 photoluminescence band is interference of the exciton radiation at the boundaries of the near-surface dead layer.
Fiz. Tverd. Tela (St. Petersburg) 40, 881–883 (May 1998) |
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