Metal–Organic Frameworks–Based Memristors: Materials,Devices, and Applications |
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Authors: | Fan Shu Xinhui Chen Zhe Yu Pingqi Gao Gang Liu |
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Affiliation: | 1.Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;2.School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;3.College of Information Engineering, Jinhua Polytechnic, Jinhua 321017, China;4.School of Materials, Sun Yat-sen University, Guangzhou 510275, China |
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Abstract: | Facing the explosive growth of data, a number of new micro-nano devices with simple structure, low power consumption, and size scalability have emerged in recent years, such as neuromorphic computing based on memristor. The selection of resistive switching layer materials is extremely important for fabricating of high performance memristors. As an organic-inorganic hybrid material, metal-organic frameworks (MOFs) have the advantages of both inorganic and organic materials, which makes the memristors using it as a resistive switching layer show the characteristics of fast erasing speed, outstanding cycling stability, conspicuous mechanical flexibility, good biocompatibility, etc. Herein, the recent advances of MOFs-based memristors in materials, devices, and applications are summarized, especially the potential applications of MOFs-based memristors in data storage and neuromorphic computing. There also are discussions and analyses of the challenges of the current research to provide valuable insights for the development of MOFs-based memristors. |
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Keywords: | metal– organic frameworks, memristor, data storage, neuromorphic computing |
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