Study of phonon polaritons in GaAs/GaPAs superlattices using methods of IR reflection spectroscopy |
| |
| Authors: | E F Venger A V Goncharenko O S Gorya N L Dmitruk V P Romanyuk |
| |
| Institution: | (1) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Nauka Ave., 252650 Kiev, Ukraine;(2) Moldova State University, Kishinev, Moldova |
| |
| Abstract: | We studied phonon-polariton modes in long-period GaAs/GaPAs semiconductor superlattices using the methods of frustrated total
internal reflection and IR spectroscopy in the region of residual rays. The excitation of waveguide, real, and virtual surface
and volume phonon polariton modes was observed experimentally. Their dispersion relations were calculated and compared with
experimental data, and the excitation nature was identified with the aid of the spectra of permittivity and a normal component
of the wave vector in heterostructure layers.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 4, pp. 460–466, July–August, 1999. |
| |
| Keywords: | superlattice surface polariton dispersion anisotropic film phonon frustrated total internal reflection |
| 本文献已被 SpringerLink 等数据库收录！ |
|
