Electrochemical oxidation of La2CuO4 thin films grown by molecular beam epitaxy |
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| Authors: | Jean-Pierre Locquet Christoph Gerber Andreas Cretton Yvan Jaccard Erica Williams Erich Mächler |
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| Affiliation: | (1) IBM Research Division, Zürich Research Laboratory, CH-8803 Rüschlikon, Switzerland;(2) D.M.P.C, Univerité de Genève, CH-1211 Genève, Switzerland;(3) Institut de Physique, Université de Neuchâtel, CH-2000, Switzerland |
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| Abstract: | Thin insulating and c-axis oriented films of La2CuO4 are grown using a molecular beam epitaxy technique. Subsequently, these films are oxidized electrochemically using a 1N KOH solution. This approach is used to induce superconductivity, leading to a maximum Tc0 of 31 K,, measured both resistively and inductively. The surface morphology, lattice constants and the resistivity before and after the electrochemical treatment are compared. |
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| Keywords: | 68.55.Bd 74.75.+t 82.45.+z |
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