| 分子束外延生长AlGaAs/GaAs GRIN-SCH SQW激光器中高温陷阱的研究 |
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| 引用本文： | 卢励吾,周洁,徐俊英,钟战天.分子束外延生长AlGaAs/GaAs GRIN-SCH SQW激光器中高温陷阱的研究[J].物理学报,1993,42(1):66-71. |
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| 作者姓名： | 卢励吾 周洁 徐俊英 钟战天 |
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| 作者单位： | (1)半导体超晶格国家重点实验室,北京100083; (2)表面物理国家重点实验室,北京100080;中国科学院半导体研究所,北京100083; (3)集成光电子学联合实验室半导体所实验区,北京100083;中国科学院半导体研究所,北京100083; (4)中国科学院半导体研究所,北京100083 |
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| 摘 要： | 应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)生长的AlGaAs/GaAs graded index separate confinement heterostructure single well(GRIN-SCH SQW)激光器的高温陷阱。样品的DLTS表明,在激光器的n-AlGaAs层里存在着高温(空穴、电子)陷阱,它直接影响着激光器的性能。高温空穴陷阱可能分布在xAl =0.2→0.43和xAl=0.43的n-AlGaAs层界面附近,而高温电子陷阱则可能分布在xAl=0.43的n-AlGaAs层里xAl值不连续的界面附近。高温电子陷阱的产生可能与AlGaAs层里的O有关。
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| 关 键 词： | 砷铝镓激光器 分子束外延 陷阱 |
| 收稿时间： | 1992-02-14 |
STUDIES ON HIGH TEMPERATURE TRAP OF AlGaAs/GaAs GRIN SCH SQW LASER FABRICATED BY MBE |
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| LU LI-WU,ZHOU JIE,XU JUN-YING and ZHONG ZHAN-TIAN.STUDIES ON HIGH TEMPERATURE TRAP OF AlGaAs/GaAs GRIN SCH SQW LASER FABRICATED BY MBE[J].Acta Physica Sinica,1993,42(1):66-71. |
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| Authors: | LU LI-WU ZHOU JIE XU JUN-YING and ZHONG ZHAN-TIAN |
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| Abstract: | The high temperature traps of AlGaAs/GaAs GRIN-SCH SQW lasers fabricated by MBE has been studied using DLTS technique.The majority and minority carrier DLTS spectra show that high temperature trap, having larger capture cross section and concentration, exist in n-AlGaAs layer of lasers. This trap may correlate strongly with oxygen content of AlGaAs layer grown by MBE. It may be responsible for the degradation of laser performance. High temperature hole trap may spatially localize between the interface of xAl= 0.2→0.43 and xAl= 0.43 n-AlGaAs layers. And high temperature electron trap may spatially localize in the interface regions of discontinous variation Al mole fraction of AlGaAs layer with xAl= 0.43. |
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