Warping of the bulk dispersion of InSb |
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| Authors: | I S Nachev V Tz Nikolochovski L S Nachev |
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| Affiliation: | (1) Department of Process and Device Modeling, Institute of Microelectronics, 1784 Sofia, Bulgaria;(2) VMEI “Lenin”, Faculty of Electronics, 1113 Sofia, Bulgaria |
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| Abstract: | ![]()
We calculate the warping of the bulk dispersion of InSb in thek-space using different models for the bulk band structure near the Γ point. It is shown that the dispersion of the conduction band Γ6 is well described by the simplified six-band model, while the fourteen-band model is more accurate for the valence bands. |
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| Keywords: | Warping bulk dispersion InSb |
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