Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands |
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| Authors: | A. Khan A. Das |
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| Affiliation: | (1) Electrocom Corporation, P.O. Box 60317, Potomac, MD 20859-0317, USA;(2) Department of Physics and Techno Physics, Vidyasagar University, Midnapore, 721102, West Bengal, India |
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| Abstract: | A formula for carrier concentration, and a relationship between mobility and diffusivity, have been presented for degenerate semiconductors with a nonparabolic energy band structure under the influence of a magnetic field. The relationships are general; they involve no approximation related to the comparative values of energy bandgap and spin orbit coupling. They should therefore, be applicable to both non-degenerate and degenerate semiconductors. They are quite suitable for the investigation of electrical transport in heavily doped semiconductors under the influence of a magnetic field. PACS 72.20.-I; 73.50.-h |
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