Formation of p-n junctions in tellurium-doped AlxGa1−xSb(As) (x = 0.15–0.20) solid solution layers

We study the variation of electron density n in depth of tellurium-doped epitaxial Al_xGa_1–xSb(As) (x = 0.15–0.20) layers. It is established that n decreases in proportion to the growth of the layer and, under definite conditions, the formation of p-n junctions in layers grown from a single melt or the growth of layers having an electron density below 10¹⁶ cm^–3 is possible. It is shown that the cause of such a decrease of electron density is the variation of the composition of the solid solution in depth of the layer and the accompanying increase in the concentration of residual acceptor defects in the material.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 82–86, November, 1984.In conclusion the authors wish to express their gratitude to senior scientist M. D. Vilisovaya, junior scientist G. K. Arbuzovaya, Z. V. Korotchenko, and V. A. Pozolotin for assistance in carrying out the experiments.