Planar sulfur-doped silicon detectors for high-speed infrared thermography |
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| Authors: | YuA Astrov LM Portsel AN Lodygin VB Shuman NV Abrosimov |
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| Institution: | 1. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021, Russia;2. Institute for Crystal Growth (IKZ), D-12489 Berlin, Germany;1. Pneumology Service, Hospital Galdakao-Usansolo, Galdakao, Bizkaia, Spain;2. Biochemistry Service, Hospital Galdakao-Usansolo, Galdakao, Bizkaia, Spain;3. Research Unit, Basurto University Hospital (Osakidetza) – Health Services Research on Chronic Patients Network (REDISSEC), Bilbao, Bizkaia, Spain;4. Research Unit, Hospital Galdakao-Usansolo – REDISSEC, Galdakao, Bizkaia, Spain;1. Dept. of Electronic Engineering, Seoul National University of Science and Technology, Seoul, Republic of Korea;2. SoC Platform Research Center, Korea Electronics Technology Institute, Sungnam, Republic of Korea;3. Dept. of Computer Science Education, Korea University, Seoul, Republic of Korea;1. Department of Biotechnological Processes, School of Engineering Chemical, University of Campinas-Unicamp, Campinas 13083-970, SP, Brazil;2. Faculty of Health Sciences, Fernando Pessoa University (UFP-FCS), Rua Carlos da Maia, 296, 4200-150 Porto, Portugal;3. Laboratory of Genetics and Molecular Analysis, Molecular Biology and Genetic Engineering Center, State University of Campinas, Campinas, SP, Brazil;4. Laboratory for Development and Evaluation of Bioactive Substance, Sorocaba University, UNISO, Sorocaba, SP, Brazil;5. Department of Biology and Environment, University of Trás-os-Montes e Alto Douro (UTAD), Quinta de Prados, 5001-801 Vila Real, Portugal;6. Centre for Research and Technology of Agro-Environmental and Biological Sciences (CITAB-UTAD), Quinta de Prados, 5001-801 Vila Real, Portugal;7. Faculty of Pharmacy, University of Coimbra (FFUC), Pólo das Ciências da Saúde, Azinhaga de Santa Comba, 3000-548 Coimbra, Portugal;1. Department of Chemical Engineering, Faculty of Engineering, Kasetsart University, Chatuchak, Bangkok, 10900, Thailand;2. Department of Agro-Industrial, Food and Environmental Technology, King Mongkut''s University of Technology North Bangkok, Pracharat 1 Road, Wongsawang, Bangsue, Bangkok, 10800, Thailand;1. Pondicherry Enginerring College, Puducherry-605009, India;2. Pondicherry Enginerring College, Puducherry-605009, India |
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| Abstract: | Planar extrinsic sulfur-doped silicon detectors for infrared (IR) semiconductor-discharge gap image converters intended for use in high-speed thermography of remote objects have been developed. The detectors were fabricated by high-temperature diffusion of sulfur into silicon wafers from the vapor phase. The dependence of doping efficiency on the sulfur vapor pressure in the course of diffusion was analyzed. The detector fabrication technology was optimized to meet the specific requirements for their operation in the microdischarge devices considered. The detectors were tested in a laboratory setup comprising a blackbody source of IR light, an image converter, and a pulsed CCD camera for recording the converted images. The converter equipped with the detector can provide imaging of objects heated to a temperature, Tmin ≈ 200 °C, with a temporal resolution on the order of 10?6 s and spatial resolution of about 5 lines/mm. |
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