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C-QWIP focal plane arrays
Authors:KK Choi  DP Forrai  D Endres  J Sun  P Pinsukanjana  JW Devitt
Institution:1. US Army Research Laboratory, Adelphi, MD 20783, United States;2. L3-Cincinnati Electronics, Mason, OH 45040, United States;3. Intelligent Epitaxy Technology, Richardson, TX 75081, United States;1. College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, PR China;2. Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, PR China;3. College of Information Science and Electronic Engineering, City College, Zhejiang University, Hangzhou 310015, PR China;1. Pharmaceutical Sciences Department, Faculty of Chemistry, Universidad de la República, Uruguay;2. Department of Pharmacobiology, Center for Research and Advanced Studies, Mexico;3. Medical Research Unit for Neurological Diseases, Speciality Hospital, 21st Century National Medical Center of the Mexican Institute of Social Security, Mexico;1. U.S. Army Research Laboratory, Adelphi, MD 20783, United States;2. L3 Space & Sensors, Mason, OH 45040, United States
Abstract:We have been developing corrugated quantum well infrared photodetector (C-QWIP) technology for long wavelength applications. A number of large format 1024 × 1024 C-QWIP focal plane arrays (FPAs) have been demonstrated. In this paper, we will provide a detailed analysis on the FPA performance in terms of quantum efficiency η and compare it with a detector model. We found excellent agreement between theory and experiment when both the material parameters and the pixel geometry were taken into account. By changing the number of quantum wells, doping density, spectral bandwidth and pixel size, a range of η from 13% to 37% was obtained. This range of η, combined with the wide spectral width, enables C-QWIPs to be operated at a high speed. For example, model analysis shows that a C-QWIP FPA with 10.7 μm cutoff and 25 μm pitch will have a thermal sensitivity of 16 mK at 2 ms integration time with f/2 optics in the presence of 900 readout noise electrons.
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