Controlling dark current in type-II superlattice photodiodes |
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| Authors: | CL Canedy EH Aifer JH Warner I Vurgaftman EM Jackson JG Tischler SP Powell K Olver JR Meyer WE Tennant |
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| Institution: | 1. Naval Research Laboratory, Washington, DC 20375, United States;2. North Carolina State University, Raleigh, NC 27695, United States;3. Army Research Laboratory, Adelphi, MD 20783, United States;4. Teledyne Imaging Sensors, Camarillo, CA 93212, United States;1. IES, Univ. Montpellier, CNRS, F-34000 Montpellier, France;2. LTM, Univ. Grenoble Alpes, CNRS, F-38000 Grenoble, France;1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China;3. Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;4. Beijing Academy of Quantum Information Sciences, Beijing 100193, China;5. Wuhan Guide Infrared Co., Ltd., Wuhan 430205, China;6. Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai 200438, PR China;1. Physics Department, Lancaster University, Lancaster LA1 4YB, UK;2. School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK;1. Wuhan Global Sensor Technology Co., Ltd., Wuhan 430000, China;2. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;1. Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology Ministry of Education, Institute of Solar Energy, Yunnan Normal University, Provincial Key Laboratory of Rural Energy Engineering, Kunming, Yunnan Province 650092, People''s Republic of China;2. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People''s Republic of China;3. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People''s Republic of China |
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| Abstract: | Limiting the defect-mediated dark currents in type-II superlattice (T2SL) IR photodiodes remains the key challenge to focal plane arrays (FPAs) based on this material system. In spite of its larger effective mass to suppress tunneling and more than an order of magnitude longer Auger lifetime, the T2SL photodiode performance still lags behind that of the incumbent HgCdTe-based technology. The tunneling and generation–recombination currents can be strongly suppressed by employing a “W” T2SL structure and gradually increasing the energy gap in the depletion region. For maximum quantum efficiency, this graded-gap geometry is combined in a hybrid structure with two-constituent T2SL absorbers that exhibit roughly twice the diffusion length of the “W” structure. Finally, if the etch used to isolate neighboring pixels is stopped just beyond the junction in the graded-gap device, narrow-gap regions are not exposed and the total sidewall area is reduced by a factor of 20. We have combined all of these approaches to produce a 10.5 μm cutoff FPA with diffusion-limited performance and noise-equivalent differential temperature (NEDT) of 35 mK at 70 K. |
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