Kondo effect in magnetic tunnel junctions |
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| Authors: | Lee K I Joo S J Lee J H Rhie K Kim Tae-Suk Lee W Y Shin K H Lee B C LeClair P Lee J-S Park J-H |
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| Institution: | Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-792, Korea. |
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| Abstract: | Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature TK=20-30 K. |
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