Energy-dependent tunneling in a quantum dot |
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Authors: | MacLean K Amasha S Radu Iuliana P Zumbühl D M Kastner M A Hanson M P Gossard A C |
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Institution: | Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. kmaclean@mit.edu |
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Abstract: | We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements. |
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