| 硅掺杂MgB_2超导薄膜的制备及研究 |
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| 引用本文： | 张从尧,王银博,冯庆荣.硅掺杂MgB_2超导薄膜的制备及研究[J].低温物理学报,2010(3). |
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| 作者姓名： | 张从尧 王银博 冯庆荣 |
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| 作者单位： | 北京大学物理学院; |
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| 基金项目： | 国家自然科学基金(批准号:50572001); 十一、五“973计划”(批准号:2006CD601004); 教育部优秀本科生基础科研基金(批准号:J0630311)资助的课题 |
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| 摘 要： | 本文报道了基于混合物理化学气相沉积法(Hybrid physical-chemical vapordeposition,简称为HPCVD),以硅烷热解出的Si原子作硅源,在SiC衬底上原位生长了一系列硅掺杂MgB_2超导薄膜样品.样品中最大硅掺杂量是9%.与纯净的MgB_2薄膜相比较,掺杂样品的超导临界转变温度T_c没有大幅下降,超导临界电流J_c得到了一定提升.在温度为5K,外加垂直磁场为3T的条件下,样品的临界电流密度最大达到2.7×10~5Acm~(-2).同时上临界场H_(c2)在超导转变温度附近对于温度的变化曲线斜率—dH/dT也有一定的提高.
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| 关 键 词： | MgB_2超导薄膜 硅掺杂 混合物理化学气相沉积法(HPCVD) |
THE STUDY OF THE MgB_2 FILMS DOPED Si |
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| ZHANG Cong-yao WANG Yin-bo FENG Qing-rong The School of Physics of Peking University,Bei jing.THE STUDY OF THE MgB_2 FILMS DOPED Si[J].Chinese Journal of Low Temperature Physics,2010(3). |
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| Authors: | ZHANG Cong-yao WANG Yin-bo FENG Qing-rong The School of Physics of Peking University Bei jing |
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| Institution: | ZHANG Cong-yao WANG Yin-bo FENG Qing-rong The School of Physics of Peking University,Bei jing 10087 |
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| Abstract: | We report the synthesis and characterization of silicon-doped MgB_2 films fabricated by hybrid physicalchemical vapor deposition(HPCVD) using silane as the doping source.Various amounts of Si up to 9%were added into MgB_2 thin films,which are in situ epitaxial growth on SiC.Compared with the undoped film,the superconducting transition temperature(T_c) of the doped film does not change significantly,however its magnetic critical current density(J_c) has been increased.J_c of the film with 5.0 at%is up to 2.7... |
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| Keywords: | MgB_2 films HPCVD |
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