Preparation and some physical properties of Bi2Te3, Sb2Te3, and As2Te3
Affiliation:
1. Energy Centre, Maulana Azad National Institute of Technology, Bhopal 462 003, India;2. Dept. of Mechanical Engineering, Delhi Technological University, Delhi 110 042, India;3. Dept. of Electrical Engineering, Maulana Azad National Institute of Technology, Bhopal 462 003, India;1. Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China;2. School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, China;3. Harbin University of Technology, No. 92, Xidazhi Street, Nangang District, Harbin 150001, China;4. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
Abstract:
The preparation of the intermetallic compounds Bi2Te3, Sb2Te3, and As2Te2 from purified elements by several techniques is discussed. Advantages and disadvantages of the various techniques are enumerated. Electrical and thermal properties are presented as functions of temperature and impurity concentration. The variation of carrier mobility with temperature is approximately T-52 role=presentation style=font-size: 90%; display: inline-block; position: relative;> for AS2Te3 and Bi2Te3. An anomalous variation of Hall coefficient with temperature is observed. The thermal conductivities of the three compounds are similar. It is suggested that the compounds are necessarily heavily doped semiconductors because Group-V atoms appear on tellurium lattice sites and tellurium atoms appear on Group-V atom lattice sites.
