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Tight-bonding calculation of acceptor energies in germanium and silicon |
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| Affiliation: | 1. Faculty of Economics and Rural Development (FERD), Vietnam National University of Agriculture (VNUA), Trauquy, Gialam, Hanoi, Vietnam;2. Vietnam National University of Agriculture Press (VNUAP), Vietnam National University of Agriculture (VNUA), Trauquy, Gialam, Hanoi, Vietnam;3. Fisheries and Technical Economic College, Tuson, Baninh, Vietnam |
| Abstract: | The differences of hole ionization energies among the group-III elements acting as acceptors in silicon indicate the necessity of considering the specific contribution of the acceptor atom. Energies of two electron bonds are calculated using Morse curves to approximate interatomic potentials. The additional binding energy increases sharply from gallium to indium in accord with experiment. Arguments are presented to show why varying the acceptor element is less important in germanium. |
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