Influence of polymer dielectric surface energy on thin‐film transistor performance of solution‐processed triethylsilylethynyl anthradithiophene (TES‐ADT) |
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| Authors: | Liang‐Hsiang Chen Pang Lin Choongik Kim Ming‐Chou Chen Peng‐Yi Huang Jia‐Chong Ho Cheng‐Chung Lee |
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| Institution: | 1. Department of Materials Science and Engineering, National Chiao‐Tung University, Hsinchu, Taiwan;2. Department of Chemical and Biomolecular Engineering, Sogang University, 1 Shinsoo‐Dong, Mapo‐gu, Seoul 121‐742, Korea;3. Department of Chemistry, National Central University, Chung‐Li, Taiwan;4. Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan |
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| Abstract: | This study investigates the correlation between surface energy of polymer dielectrics and the film morphology, microstructure, and thin‐film transistor performance of solution‐processed 5,11‐bis(triethylsilylethynyl) anthradithiophene (TES‐ADT) films. The low surface energy polyimide (PI) dielectric induced large grains with strong X‐ray reflections for spin‐cast TES‐ADT films in comparison to high surface en‐ ergy poly(4‐vinyl phenol) (PVP) dielectric. Furthermore, thin‐film transistors based on spin‐cast TES‐ADT films on PI dielectric exhibited enhanced electrical performance, small hysteresis, and high stability under bias stress with carrier mobility as high as 0.43 cm2/Vs and a current on/off ratio of 107. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | organic thin‐film transistors triethylsilylethynyl anthradithiophene polymers dielectric materials surface energy |
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