Mixed Valence Tungsten (IV,V) Compounds with Layered Structures (Part IV): Syntheses,Crystal Structures,and Conductivity of BiX2[W2O2X6] (X = Cl,Br) |
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Authors: | Marcel Schieweling Jörg Daniels Prof. Dr. Johannes Beck |
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Affiliation: | Institut für Anorganische Chemie, Universit?t Bonn, Gerhard‐Domagk‐Str. 1, 53121 Bonn, Germany |
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Abstract: | The reaction of metallic bismuth with either tungsten tetrachlorideoxide WOCl4 at 650 K or tungsten tetrabromideoxide WOBr4 at 670 K, respectively, leads to BiX2[W2O2X6] (X = Cl, Br) as black, lustrous crystal needles. The crystal structure determinations (triclinic, P$bar{1}$ ) show the two isotypic structures to be closely related to Hg0.55[W2O2Cl6] with the presence of 1D‐polymeric W2O2X6 double strands. Dinuclear [Bi2X4]2+ cations are embedded in the host structure via secondary W–X ··· Bi bonds. Unlike the other members of theMy[W2O2X6] structure family, which crystallize monoclinic and show crystallographic equivalent tungsten atoms, BiX2[W2O2X6] has independent tungsten sites. Nevertheless, an assignment of an individual oxidation state to the tungsten atoms within the W2 group (W–W 2.8321(4) Å for X = Cl, 2.8985(4) Å for X = Br) is not possible and a dynamic intervalent state W(IV, V) is assumed. Electrical conductivity measurements for BiCl2[W2O2Cl6] show semi‐conductive behavior with a very small band gap of 70 meV and a high conductivity of around 0.5 Ω–1cm–1 at temperatures above 220 K. A temperature dependence of the activation energy of charge transport is present and interpreted by the Varshni model. |
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Keywords: | Tungsten Bismuth Oxide halides Mixed‐valent compounds Small gap semi‐conductor Temperature dependent band gap |
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