Transparent p‐NiO/n‐ZnO diodes used in circuit rectifiers |
| |
| Authors: | Heesun Bae Kyung Ha Lee Kwang H. Lee Jong Han Song Seongil Im |
| |
| Affiliation: | 1. Department of Physics, University of Seoul, Seoul 130‐743, Korea;2. R&D Center, LG Display, Paju‐si, Gyeonggi‐do 413‐811, Korea;3. Agency for Defense Development (ADD), Daejeon 305‐600, Korea;4. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 130‐650, Korea;5. Department of Physics, Yonsei University, Seoul 120‐749, Korea |
| |
| Abstract: | ![]()
We report on the fabrication of a transparent photostable cell circuit composed of drive and resistor diodes which are face‐to‐face connected to each other with different device area. The diodes consisted of e‐beam evaporated p‐NiO on sputter‐deposited n‐ZnO for p/n diode formation on indium‐tin‐oxide glass. Our transparent diodes show photostable rectifying behavior, about 103 on/off current ratio and even dynamic rectification at a maximum frequency of 100 Hz AC input signal in ambient light. The noticeable photo‐responsivity of the circuit was obtained only under ultraviolet (UV) light. We conclude that our transparent diode circuit is promising in enriching the field of transparent device electronics. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| |
| Keywords: | NiO ZnO junction diodes transparent oxides rectification |
|
|
