The Kondo effect in reduced graphene oxide films |
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| Authors: | Ross McIntosh Somnath Bhattacharyya |
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| Institution: | Nano‐Scale Transport Physics Laboratory, School of Physics, and DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand, Private Bag 3, WITS 2050, Johannesburg, South Africa |
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| Abstract: | The influence of spin in reduced graphene oxide (RGO) is demonstrated through a temperature dependent metal–insulator transition in resistance (at ～30 K) as well as high field magneto‐resistance (MR) measurements. RGO samples, prepared using an unconventional organic acid reduction method, showed a quadratic temperature dependence of resistance at low temperatures, which changed to a logarithmic dependence at higher temperatures. Analysis of these features in RGO, combined with negative MR which scales with a Kondo characteristic temperature, establishes the interaction between conduction electrons propagating through intact graphene nano‐islands and localized magnetic moments found in disordered regions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | graphene oxide electronic transport Kondo effect metal‐insulator transition magnetoresistance |
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