| A CO_2 laser rapid-thermal-annealing SiO_x based metal-oxide-semiconductor light emitting diode |
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| 作者姓名： | 林俊荣 林恭如 |
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| 作者单位： | Graduate Institute of Photonics and Optoelectronics Department of Electrical Engineering，National Talwan University，Graduate Institute of Photonics and Optoelectronics，Department of Electrical Engineering，National Taiwan University，Talpei 106，Talpei 106 |
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| 摘 要： | ![]()
Enhanced near-infrared (NIR) electroluminescence (EL) of a metal-oxide-semiconductor light emitting device (MOSLED) made on CO_2 laser-annealed SiO_x film is demonstrated.An EL power of near 50 nW from CO_2 laser rapid-thermal-annealing (RTA) MOSLED under a biased voltage of 85 V and a current density of 2.3 mA/cm~2 is preliminarily reported.
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