Modelling diffraction patterns from one‐dimensionally disordered structures of AIIBVI crystals by Monte Carlo Technique IV. The 6H structure with different kinds of stacking faults

To investigate the one‐dimensionally disordered structures (ODDS) in the close packed (cp) crystals, the Monte Carlo computer simulation technique has been applied. Calculations of the diffraction intensity distributions along the 10.L reciprocal lattice row from the 6H(33) structure with the four different kinds of the stacking faults (SFs): growth, deformation, layer displacement and extrinsic fault are presented. In particular, using the simple frequency functions of the fault to fault distances, both random and non‐random distributions of the SFs are considered. Distinctive features of the diffraction patterns corresponding to the chosen examples of the transformations from the parent 6H(33) structure into another small‐period polytypes are discussed in detail. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)