Ion beam modification and analysis of GdBaCuO thin film on Si substrates

The effects of ion implantation into thin films of the GbBaCuO on Si substrates without any buffer layer at 300 and 77 K have been studied. Using H⁺ ions, the superconducting transition temperature, the change of electrical properties from conducting to insulating, and the crystalline to amorphous structural transition in the films were studied as a function of ion dose. The implantation energy was 150 keV.