Auger and photoluminescence analysis of ZnO nanowires grown on AlN thin film |
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Authors: | Ramin Yousefi Burhanuddin Kamaluddin Fatemeh Hajakbari |
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Institution: | a Solid State Laboratory, Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia b Plasma Physics Research Center, Science and Research Campus, Islamic Azad University, 14665-678 Tehran, Iran |
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Abstract: | ZnO nanowires were grown on AlN thin film deposited on the glass substrates using a physical vapor deposition method in a conventional tube furnace without introducing any catalysts. The temperature of the substrates was maintained between 500 and 600 °C during the growth process. The typical average diameters of the obtained nanowires on substrate at 600 and 500 °C were about 57 and 22 nm respectively with several micrometers in length. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into the ZnO nanowires for the sample grown at 600 °C. Photoluminescence of the nanowires exhibits appearance of two emission bands, one related to ultraviolet emission with a strong peak at 380-382 nm, and the other related to deep level emission with a weak peak at 503-505 nm. The ultraviolet peak of the nanowires grown at 500 °C was blue shifted by 2 nm compared to those grown at 600 °C. This shift could be attributed to surface effect. |
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Keywords: | 71 55 Gs 78 55 Et |
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