Junction characteristics of C60/polycarbonate blend on Si substrate

We report a study of the interface between fullerene (C₆₀) doped polycarbonate (PC) blends and n-type Si substrate. C₆₀ is usually an electron acceptor in interpenetrated networks and an electron transport in photovoltaic cells. We have studied that the guest-host approach to prepare C₆₀ doped polycarbonate blend. In this article, we report the I-V characteristics of C₆₀ doped polycarbonate/n-type Si junction and the annealing effect on these characteristics. In this junction, a nanocomposite of organic semiconductor fullerene (C₆₀), used as the active medium, with an inert polycarbonate matrix was spin coated on n-type Si substrate. We found that the C₆₀ shows the junction characteristics with n-type Si substrate. The knee voltage and dynamic resistance varies with concentration of C₆₀ as well as temperature. Ellipsometry studies showed the annealing effect on the refractive index and thickness of C₆₀ doped polycarbonate blend on n-type Si substrate. The optical micrographs show that fullerene (C₆₀) is spherical molecule and it is blend in the form of crystallites having size of micron order.