Structural analysis of SiO2 gel films by high energy electron diffraction |
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| Authors: | H. Ohsaki K. Miura A. Imai M. Tada M. A. Aegerter |
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| Affiliation: | (1) Adv. Glass R&D Cnt., Asahi Glass Co. Ltd., Kanagawa-ku, 221 Yokohama, Japan;(2) Dept. of Physics, Aichi Univ. of Education, 448 Kariya, Aichi, Japan;(3) Osaka Prefectural Technical College, Saiwai-cho, 572 Neyagawa, Japan;(4) Inst. de Fisica e Quimica de São Carlos, Univ. de São Paulo, 13560 São Carlos, Brazil |
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| Abstract: | The structure of SiO2 gel-films prepared from acid and basic TEOS solutions is analyzed by high energy transmission electron diffraction method. The Si-O bond length of gel-films is 1.58 to 1.60 Å, which is shorter than that of vitreous silica (1.61 Å) but similar to that of 80 Å thick evaporated a-SiO2 film. An atomic pair peak with 0.81 Å distance exists on the reduced radial distribution functions of the gel-films, which is believed to be O-H, but being smaller than that of H2O (0.969 Å). |
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| Keywords: | SiO2 gel thin film atomic structure electron diffraction O-H bond Si-O bond |
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