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A possible origin of room temperature ferromagnetism in Indium-Tin oxide thin film: Surface spin polarization and ferromagnetism |
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| Authors: | Bin Xia Yu WuHui Wen Ho Chang KeWen Dong Song Cheng Hon Alfred HuanJer Lai Kuo Wei Guang ZhuLan Wang |
| Institution: | a Nanyang Technological University, School of Physical and Mathematical Sciences, Division of Physics and Applied Physics, Singapore 637371, Singapore b Data Storage Institute, Agency of Science, Singapore 117608, Singapore c Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan d GlobalFoundries Singapore Pte Ltd., Singapore 738406, Singapore e Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore 637371, Singapore |
| Abstract: | Room temperature ferromagnetism in both transition-metals doped and undoped semiconductor thin films and nanostructures challenges our understanding of the magnetism in solids. In this report, we performed the magnetic measurement and Andreev reflection spectroscopy study on undoped Indium-Tin oxide (ITO) thin films and bulk samples. The magnetic measurement results of thin films show that the total magnetization/cm2 is thickness independent. Prominent ferromagnetism signal was also discovered in bulk samples. Spin polarized electron transports were probed on ITO thin film/superconductor interface and bulk samples surface/superconductor interface. Based on the magnetic measurement results and spin polarization measurement data, we propose that the ferromagnetism in this material originates from the surface spin polarization and this surface polarization may also explain the room temperature ferromagnetism discovered in other undoped oxide semiconductor thin films and nanostructures. |
| Keywords: | Dilute magnetic semiconductor Ferromagnetism Spin polarization Point contact Andreev reflection ITO thin film |
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