| Abstract: | ![]()
We performed a systematic study of ion‐implanted 6H‐SiC standards to find the optimal regimes for SIMS analysis. Relative sensitivity factors (RSFs) were acquired for operating conditions typical of practical SIMS applications. The experimental SiC RSFs were compared with those found for silicon: 1 the matrix effect was insignificant in most cases. It was found that the SiO? cluster ion cannot represent correctly the real oxygen distribution in SiC. The physics of the effect is discussed. Copyright © 2003 John Wiley & Sons, Ltd. |
